High-Performance IGZO TFT/Perovskite Ultraviolet–visible Photodetectors for Imaging Application

Photodetectors (PDs) consisting of photodiode-structure devices (PSDs) and thin-film transistors (TFTs) are desirable for imaging application. Organic-inorganic hybrid lead halide perovskites and Indium Gallium Zinc Oxide (IGZO) are considered as potential candidates for high-performance PSDs and TFTs, enabling the fabrication of PDs with favorable photoelectric conversion capability and on-off characters. Herein, we developed an ITO/SnO2/Cs0.22FA0.78Pb(Br0.15I0.85)3/Spiro-OMeTAD/MoO3/IZO self-powered photodiode, which achieved a high responsivity of 0.41 A/W and specific detectivity of 9.46 × 1013 Jones. Furthermore, we fabricated IGZO TFTs using films deposited under optimal sputtering conditions (an argon-to-oxygen ratio of 30:1, a sputtering pressure of 3 m Torr and a sputtering power of 5 W), demon-strating great electrical performance. Additionally, we integrated the IGZO TFT with perovskite active layers to create a 3 × 3 array, which exhibited a broad spectral response spanning from 350 to 700 nm. The photodetector array device based above mentioned perovskite PSD and IGZO TFT achieved a responsivity of 0.25 A/W, a specific detectivity of 6.45 × 1011 Jones, and an average on-off current ratio of 2.35 × 102. Finally, the array device was successfully utilized for imaging, confirming its potential in photodetection and imaging applications.